SL 26

FETS MADE OF ANISOTROPIC LAYERS OF QUATERTHIOPHENE DERIVATIVES

P. Miskiewicz^a,b, J. Jung^a, S. Kotarba^a, I. Glowacki^a, M. Shkunov^b,
M. Heeney^b, W. Zhang^b, W. Maniukiewicz^c, J. Ulanski^a

^a Department of Molecular Physics, Technical University of Lodz, 90-924 Lodz, Poland (Jacek.Ulanski@p.lodz.pl, http://www.p.lodz.pl/k-32/)

^b Merck Chemicals, Chilworth Science Park, University Parkway, Southampton, SO16 7QD, UK

^c Institute of General and Ecological Chemistry, Technical University of Lodz, 90-924 Lodz, Poland

The paper presents preparation and performance of field-effect-transistors made of calamitic a,w‑dipropylquaterthiophene. Large area of highly oriented layers of this soluble oligothiophene derivative were obtained by the so called zone-casting technique. UV-VIS polarized spectroscopy, Raman polarized spectroscopy, AFM, X-ray diffraction and field-effect characteristics show high anisotropy of the zone-cast layer. Of particular importance is large anisotropy of the charge-carrier mobility measured parallel and perpendicular to the zone-casting direction.

Acknowledgment

This work was financially supported through the EC Integrated Project NAIMO NMP4-CT-2004-500355 and MNiI Grant T08E 01327, Poland.